Method for gluing quantum dot film and quantum dot films

Abstract

The invention discloses a method for gluing quantum dot films and the quantum dot films. The method comprises the steps of preparing one or more layers of quantum dot films from colloidal quantum dots, volatilizing solvents in the quantum dot films after the films are formed, and forming the quantum dot films which only contain the quantum dots; putting the quantum dot films into a vacuum plasma generation cavity; and introducing H2 into the vacuum plasma generation cavity, then transforming the H2 into H plasma and gluing the quantum dot films through the H plasma. The quantum dot films are glued by use of HHIC and the process is improved, so that the quantum dot films have better effects of solvent resistance and mechanical force. The method for gluing the quantum dot films by HHIC is short in elapsed time, low in condition requirements and free of a special requirement on a reactant; and no new material is generated. Furthermore, the films glued by HHIC are better than traditional films which are glued in a heating manner in stability, and the electrical properties of the films are not changed. The application range and the material selection range of a solution method can be expanded by HHIC.