Software Engineering Internationally Distributed Business Networks and Management: SE-IDBN
Process for producing a buried insulating layer in a semiconductor substrate by ion implantation, which involves producing a mask on the substrate regions where the active zones are located.
Abstract
Process for producing a buried insulating layer in a semiconductor substrate by ion implantation. This process consists of producing a mask on the substrate regions where the active zones are located, carrying out oxygen or nitrogen ion implantation in the substrate through the mask for the direct forming in the exposed area, and forming by lateral dispersion and diffusion into the substrate of implanted ions beneath the mask, a continuous oxide or nitride insulating layer which is buried in the substrate and optionally annealing the implanted substrate for reinforcing the continuity of the insulating layer by lateral diffusion of the implanted ions.