Strain/stress-engineering in phonon properties of streesed semiconductor nanowires

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Abstract

The phonon properties and thermal performance of stressed silicon nanowires have been studied theoretically. The spatial confinement effect has been accounted for based on the elastic theory. The modified vibration equation and elastic modulus of nanowire are addressed due to the existence of the pre-stress field. Numerical results show that the phonon dispersion of nanowire can be changed by the applied transversal biaxial stresses, leading to that the phonon thermal conductivity of silicon nanowire can be tuned through controlling the strength and direction of applied stresses.