The semiconductor structure comprises a quantum dot and a quantum dot method

Abstract

It provides a semiconductor structure comprising a quantum dot and a quantum dot method. QD manufacturing method comprising: preparing a (a) a first barrier layer, the well layer and the compound semiconductor layer 2, the barrier layer comprises a quantum well structure are sequentially stacked; (B), but forming a dielectric thin film pattern including the second barrier layer onto the said first coefficient of thermal expansion is greater than the second barrier layer, the first dielectric thin film, and wherein the small second dielectric thin-film coefficient of thermal expansion than the second barrier layer, the first dielectric thin film to form to have a width of nanometer size; And (c) causing intermixing between the dielectric thin film pattern by heating the formed compound semiconductor layer, the second element of the elements and the barrier layer of the well layer in the area of ​​the compound semiconductor layer corresponding to the lower portion of the dielectric film and a step of. Accordingly, to minimize defects generated during the production process of the quantum dot, and it may be selectively controlled by the size, density and the growth location of the quantum dots.