No TL;DR found
To reduce the absorption by the LED die (12) of the light emitted by the phosphor layer (48), the semiconductor layer of the LED die (12) for performing absorption, a relatively thick glass plate mounted to the LED die (44 ) by, or by the LED die transparent growth substrate, it is spaced apart from the phosphor layer. Thus, phosphor light emitted at a sufficient angle towards the LED die, will be leaving the side wall of the spacer through the transparent spacer (44), that their light is absorbed by the LED die There is prevented. LED die may be a GaN-based. The spacer is the thickness of at least 100 microns. With this technique, as compared to light emission when the phosphor is directly stacked placed on the LED semiconductor layers, 16% of the light extraction increasing is achievable.