Far-infrared reflection-absorption investigation of SnCl4 on silica and Na-modified silica surfaces using the buried metal layer approach

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Abstract

One of the key reactions in the CVD growth of SnO2 on glass is that between SnCl4 and H2O. Exploiting the buried metal layer approach, we have used far-infrared RAIRS at the Daresbury synchrotron, to study the initial steps in this process on model glass surfaces, consisting of thin (approximately 500 - 1000 angstroms) SiO2 films and Na covered SiO2 films grown on a tungsten substrate.