Amorphization engineered VSe_2−<i>x</i> nanosheets with abundant Se-vacancies for enhanced N₂ electroreduction

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Abstract

<jats:p>Amorphous VSe<jats:sub>2−<jats:italic>x</jats:italic></jats:sub> nanosheets with abundant Se-vacancies (V<jats:sub>Se</jats:sub>) showed dramatically enhanced NRR activity and selectivity, attributed to the amorphization-triggered Se-vacancies that promote the NRR and impeding the H<jats:sub>2</jats:sub> evolution.</jats:p>