Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications
2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)Published 25 June 2003
M. Gill, T. Lowrey, Jongsun Park
Citations69
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Abstract
The development status of Ovonic Unified Memory (OUM), a phase-change non-volatile semiconductor memory technology for VLSI stand-alone memory and embedded applications, is discussed. Using 0.18 μm 3 V CMOS, cells from 5F/sup 2/ to 8F/sup 2/ are built in a charge-pump-free 4 Mb development vehicle. Direct overwrite, 10 ns reset times, 50 ns set times, and 1.0×10/sup 12/ cycling are achieved. At en-year data retention is projected at 120°C.
Keywords
Materials ScienceEngineering
OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications
285 Citations2002Sz‐Nian Lai, T. Lowrey
The development status of the memory cell element of OUM (Ovonic Unified Memory) - a chalcogenide-based, phase-change nonvolatile semiconductor memory technology at the 180 nm technology node is discussed.