Writing current reduction for high-density phase-change RAM
Published 22 March 2004
Y.N. Hwang, Sojung Lee, S.J. Ahn, Sangyoon Lee, Kyung‐Chang Ryoo, Hye-Ri Hong
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Abstract
By developing a chalcogenide memory element that can be operated at low writing current, we have demonstrated the possibility of high-density phase-change random access memory. We have investigated the phase transition behaviors as a function of various process factors including contact size, cell size and thickness, doping concentration in chalcogenide material and cell structure. As a result, we have observed that the writing current is reduced down to 0.7 mA.
Keywords
Materials ScienceEngineeringComputer Science