Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al<sub>0.1</sub>Ga<sub>0.9</sub>N Layered Structures
Japanese Journal of Applied PhysicsPublished 1 September 1991
Kenji Itoh, Takeshi Kawamoto, Hiroshi Amano, Kazumasa Hiramatsu, Isamu Akasaki Isamu Akasaki
Citations93
SJR quartileQ3
SJR score0.29
SNIP0.71
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Abstract
High-quality, well-controlled GaN/Al 0.1 Ga 0.9 N layered structures with periodicity varying from 4.5 nm to 60 nm have been successfully grown on (0001) sapphire substrates by Metalorganic Vapor Phase Epitaxy (MOVPE). The layered structure has been confirmed by double-crystal X-ray diffractometry. Photoluminescence peak energy showed a shift toward the higher-energy side with decreasing thickness of the GaN well layer, which is in good agreement with the calculation obtained from the Kronig-Penny analysis.
Keywords
Materials SciencePhysics and Astronomy
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