Shortest wavelength semiconductor laser diode
Electronics LettersPublished 6 June 1996
Isamu Akasaki, S. Sota, Hiroshi Sakai, Toshiyuki Tanaka, Masayoshi Koike, Hiroshi Amano
Citations462
SJR quartileQ3
SJR score0.27
SNIP0.44
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Abstract
A group III, nitride based, separate confinement heterostructure (SCH) single quantum well (SQW) structure, with an active layer thickness as small as 1.5 nm, was fabricated. It shows the shortest lasing from semiconductor lasers by current injection at room temperature to date. Line width is as little as 0.15 nm.
Keywords
EngineeringPhysics and Astronomy
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