Poly(methylphenylsilane) film as a hole transport layer in electroluminescent devices

Abstract

Electroluminescent devices were fabricated using poly(methylphenylsilane) and 8-hydroxyquinoline aluminum complex as the hole transport layer and the emitting layer, respectively. The cell structure of glass substrate/indium-tin-oxide/hole transport layer/emitting layer/Mg/Ag was employed. Smooth hole injection from the electrode through the polymer layer and concomitant efficient electroluminescence from the emitting layer were observed. Green emission with a luminance of over 1000 cd/m2 was achieved at a current density of 100 mA/cm2.