An amorphous silicon photodetector for picosecond pulses
Applied Physics LettersPublished 1 January 1980
D. H. Auston, P. Lavallard, N. Sol, D. Kaplan
Citations142
SJR quartileQ1
SJR score0.90
SNIP1.00
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Abstract
A new photoconductive detector utilizing an amorphous silicon film grown by CVD is demonstrated to have a response time of 40 ps. An estimate of the carrier mobility suggests a mechanism involving the rapid relaxation of photoexcited carriers from relatively mobile extended states to immobile localized states.
Keywords
Materials ScienceEngineeringPhysics and Astronomy
Applied Physics LettersPicosecond optoelectronic switching and gating in silicon
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