High-field transport in wide-band-gap semiconductors

Abstract

The drift velocity in high electric fields is calculated for several wide-band-gap semiconductors. Saturated velocities above ${10}^{7}$ cm/sec are found for several and SiC, diamond, and GaN hold promise for values above 2\ifmmode\times\else\texttimes\fi{}${10}^{7}$ cm/sec.