Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE
Journal of The Electrochemical SocietyPublished 1 May 1990
Hiroshi Amano, Masahiro Kitoh, Kazumasa Hiramatsu, Isamu Akasaki
Citations212
SJR quartileQ1
SJR score0.77
SNIP0.76
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Abstract
Growth and luminescence properties of Mg‐doped prepared by metal‐organic vapor phase epitaxy, in which or is used as the Mg source gas, are reported for the first time. It was found that the Mg concentration in is proportional to the flow rate of the Mg source gas; the doping efficiency of Mg into is independent of the substrate temperature from 850° to 1040°C; and Mg in acts as an acceptor and forms blue luminescence centers. By using, an efficient near‐UV and blue LED can be fabricated.
Keywords
Materials SciencePhysics and Astronomy