Magnetoresistive Properties of Tb/Ti and Tb/Si Multilayers
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomenaPublished 1 April 2009Open access
A. V. Svalov, V. O. Vas’kovskiy, J.M. Barandiarán, I. Orúe, А. Н. Сорокин, G. V. Kurlyandskaya
Citations3
SJR quartileQ4
SJR score0.17
SNIP0.19
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Abstract
Magnetic, magnetoresistive and structural properties of Tb/Ti and Tb/Si nanoscale multilayers prepared by alternative deposition of Tb layers and Ti or Si spacers are comparatively studied. It was concluded that spin disorder scattering is responsible for the negative longitudinal magnetoresistance observed in multilayers of both types.
Keywords
Materials SciencePhysics and Astronomy
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