Fabrication of a diamond p-n junction diode using the chemical vapour deposition technique

Abstract

A diamond p−n junction diode has been fabricated by the chemical vapour deposition technique. Diphosphorus pentaoxide and boron trioxide were used for the doping sources for the n- and p-type layers, respectively. The diode shows distinct rectification characteristics at 300 K room temperature. This diode shows rectification even at 370 K and this result implies the possible use of diamond as a semiconductor in high temperature conditions.