A Light-Emitting Field-Effect Transistor
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TL;DR
The structure and operating characteristics of an ambipolar light-emitting field-effect transistor based on single crystals of the organic semiconductor alpha-sexithiophene, which is the basis of a very promising architecture for electrically driven laser action in organic semiconductors is reported.
Abstract
We report here on the structure and operating characteristics of an ambipolar light-emitting field-effect transistor based on single crystals of the organic semiconductor alpha-sexithiophene. Electrons and holes are injected from the source and drain electrodes, respectively. Their concentrations are controlled by the applied gate and drain-source voltages. Excitons are generated, leading to radiative recombination. Moreover, above a remarkably low threshold current, coherent light is emitted through amplified spontaneous emission. Hence, this three-terminal device is the basis of a very promising architecture for electrically driven laser action in organic semiconductors.