Doping of diamond
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Abstract
Semiconducting diamond films were deposited by the conventional hot filament chemical vapour deposition technique. Boron trioxide and diphosphorus pentaoxide have been used as the dopants for p- and n-type films respectively. The films obtained were identified as diamond by means of scanning electron microscopy, electron diffraction and Raman spectroscopy. The impurity concentrations in the films were evaluated using secondary ion mass spectroscopy. The semiconducting properties of the films were confirmed by measuring the resistivity, the Hall effect and the activation energy of the conductivity.