Full integration and reliability evaluation of phase-change RAM based on 0.24 /spl mu/m-CMOS technologies
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TL;DR
It is observed that a nonvolatile random access memory is fully integrated by successfully incorporating a reversibly phase-changeable chalcogenide memory element with MOS transistor on the basis of basic characteristics of the memory operation and reliable performances on hot temperature operation.
Abstract
We have fully integrated a nonvolatile random access memory by successfully incorporating a reversibly phase-changeable chalcogenide memory element with MOS transistor. As well as basic characteristics of the memory operation, we have also observed reliable performances of the device on hot temperature operation, endurance against repetitive phase transition, writing imprint, reading disturbance and data retention.